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SELECTOR GUIDE
Semiconductor Product Selector Guide
  Process Type Typical Seal Temperature Typical Process Environment Suggested Products Comments Typical Applications

Plasma Processes
HDPCVD/
PECVD/
SACVD
25-250oC TMS, TEP, TEBO
TEOS, SiH4
NH3, SiF4
O2, O3, N2O
NF3, CF4, C2F6
9100
8085
8002
9100-Optimum for deposition process applications. Low erosion rate and ultra-low particle generation in oxygen and fluorine-based plasmas. Excellent elastic recovery properties.

8085-General purpose product for all plasma processes. Excellent mechanical strength properties.

8002-Transparent product for "select" plasma process applications. Ultra-low particle generation in oxygen and fluorine-based plasmas.
Dynamic:
- Door seals
- Gate valves
- Pendulum valves
- Lip seals

Static:
- Chamber lid seals
- Electrode seals
- Lamp seals
- Exhaust valves
- Gas inlets/outlets
- Window seals
- Center rings
- Fittings

Carrier:
- Wafer/
  FPD Support/
  Transport
PVD 25-250oC High Vacuum
Ar, N2
Metal CVD
ALD
25-250oC WF6, SiH4
Organic Precursors
H2, N2, O2
TiCl4, NF3
Etching 25-220oC CF4, C3F8, CHF3
SF6, O2, H2, HBr
BCl3, CCl4, Cl2
9100
8085
8002
Ashing/
Stripping
25-250oC O2, CF4, CHF3, NH3
H2O Vapor
Forming Gas

Thermal Processes
LPCVD/
ALD
150-300oC NH3, HCl
SiH4, SiH2Cl2
H2O Vapor, O3
7075UP
8475
7075UP-Optimum for LPCVD, ALD, oxidation and diffusion thermal process applications.

8475-Optimum for lamp anneal and RTP thermal process applications.
- Quatz Chamber seal
- Fittings
- Center ring
- Plenum seals
Oxidation/
Diffusion
150-300oC N2, O2
H2O, HCl
Lamp Anneal
RTP
150-300oC Resistance to IR absorption/ low outgassing 8475

Wet Processes
Wafer Prep,
Cleaning,
and Rinsing
25-125oC UPDl, Piranha
SC-1, SC-2, O3
HF(49%)
6375UP
4079
6375UP-Optimum for wet process applications.

4079-Excellent chemical resistance.

1050LF-Excellent amine resistance.
- Door/lid seals
- Drain seals
- Seals for chemical containers
- Fittings
- Seals for filters/ connectors
- Flow meters
Etching 25-180oC HNO3, HF, H2O
H3PO4, HNO3
Acetic, H2O
Photolithography Developing and Rinsing 25-125oC H2SO4 + Oxidant
Organic Acids
NaOH, TMAH
Xylene, nMP
Stripping 25-125oC nMP/Alkanolamine
Hydroxlamine
6375UP
1050LF
Copper Plating 25-100oC CuSO4 Solution
H2SO4, H2O2
UPDI
Citric Acid
6375UP
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